MIMOSA 3:
- fabricated by IBM in Spring 2001
- 0.25 µm CMOS technology
- epitaxial layer thickness: 2.5 µm
- nominal power supply: 2.5 V
- 2 arrays of 128 x 128 pixels
- pixel size: 8 x 8 µm2
- gate oxide thickness: 5.84 nm
- diode (n-well/p-substrate) size:
1 x 1 µm2 - 2.1 fF
- serial analogue read-out
- max. clock frequency: 40 MHz
- radiation tolerant transistor design
- low noise (6 e- ENC)
- structures for radiation hardness tests
|
 |